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Kurochka A. Features of Electronic Emission from Surface of Dielectric Thin-film Materials with Ion-beam Etching [Електронний ресурс] / A. Kurochka, A. Sergienko, S. Kurochka, V. Kolybelkin // Журнал нано- та електронної фізики. - 2014. - Т. 6, № 3. - С. 03031-1-03031-3. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2014_6_3_33 This work presents a series of experimental studies aimed at validating the main theoretical aspects of the ion-electron emission in conditions of ion-beam etching and lookup the possibility of practical realization of the method of operative control processes ion-beam etching different dielectric thin film materials of electronic technics. In the real article the estimation of influence of the pointed superficial potential is conducted in dielectric tape on the integral signal of secondary electrons at an ionic etch. The electric field strength in dielectric film under the influence of the induced potential creates prerequisites for the emergence of "Malterovskay" emission, defined by properties actually dielectric and properties of the substrate.
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Kurochka A. Features of Ion-Electronic Emission from Surface of Semiconductors [Електронний ресурс] / A. Kurochka, A. Sergienko, S. Kurochka, V. Kolybelkin, S. G. Emelyanov, E. V. Yakushko, L. M. Chervjakov // Journal of Nano- and Electronic Physics. - 2013. - Vol. 5, № 4(1). - С. 04036-1-04036-3. - Режим доступу: http://nbuv.gov.ua/UJRN/jnep_2013_5_4(1)__38 The results of the research value of the current of the secondary electrons in the ion-beam etching of various semiconductors. Shows the setup and electrical circuit of the experiment. An experimental study to determine the dependence of the current of the secondary electrons from the band gap Eg and the height of the potential barrier (electron affinity) echi. It is shown that in the conditions of ion-beam etching of the semiconductor is the penetration of the electric field, which leads to a shift of the energy levels of electrons in the surface layer. Found that the ion-electronic signal emission silicon n-type is higher than the p-type silicon.
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Rogachev I. A. Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor [Електронний ресурс] / I. A. Rogachev, A. V. Knyazkov, O. I. Meshkov, A. S. Kurochka // Журнал нано- та електронної фізики. - 2016. - Т. 8, № 2. - С. 02044-1-02044-3. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2016_8_2_46 Reported about study of processes of formation of Ti/Al/Ni/Au ohmic contacts to heterostructures AlGaN/GaN and gate Ni/Au. Investigated of process recess the semiconductor layer for minimum resistance of ohmic contact - <$E0,4~roman {Ohm~cdot~mm}>. Studied influence of encapsulation ohmic contacts on their surface morphology.
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